Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: On/off current ratio

摘要

Choosing a suitable doping level of channel relevant to channel diameter isconsidered for determining the carbon nanotube field effect transistors'performance which seem to be the best substitute of current transistortechnology. For low diameter values of channel the ratio of on/off currentdeclines by increasing the doping level. But for higher diameter values thereis an optimum point of doping level in obtaining the highest on/off currentratio. For further verification, the variations of performance are justified byelectron distribution function's changes on energy band diagram of thesedevices. The results are compared at two different gate fields.